advanced power n-channel enhancement mode electronics corp. power mosfet e3 lower gate charge bv dss 30v e3 simple drive requirement r ds(on) 25m e3 fast switching characteristic i d 20a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 : a i d @t c =100 : a i dm a p d @t c =25 : w w/ : t stg : t j : symbol value units rthj-c thermal resistance junction-case max. 10 : /w rthj-a thermal resistance junction-ambient max. 110 : /w data & specifications subject to change without notice 200720071-1/4 thermal data parameter linear derating factor 0.1 storage temperature rangeoperating junction temperature range -55 to 175-55 to 175 total power dissipation gate-source voltage 20 continuous drain current 20 continuous drain current 14 pulsed drain current 1 60 parameter rating drain-source voltage 30 AP40U03GH 15 rohs-compliant product g d s to-252(h) the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =12a - - 25 m v gs =4.5v, i d =8a - - 40 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =12a - 12 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =12a - 8 13 nc q gs gate-source charge v ds =24v - 1.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 5 - nc t d(on) turn-on delay time 2 v ds =15v - 5 - ns t r rise time i d =12a - 36.5 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 16 - ns t f fall time r d =1.25 -5- ns c iss input capacitance v gs =0v - 450 720 pf c oss output capacitance v ds =25v - 80 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf r g gate resistance f=1.0mhz - 1.4 2.1 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =12a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =12a, v gs =0 v , - 20 - ns q rr reverse recovery charge di/dt=100a/s - 15 - nc notes: 1.pulse width limited by max. junction temperature2.pulse test this product is an electrostatic sensitive, please handle with caution.device or system are not authorized. 2/4 this product has been qualified for consumer market. applications or uses as criterial component in life support AP40U03GH
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 AP40U03GH 0 10 20 30 40 0.0 1.0 2.0 3.0 4.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =175 o c 10v 7 .0v 5.0v 4.5 v v g =3.0v 0 10 20 30 40 50 60 0.0 1.0 2.0 3.0 4.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0 v 5.0v 4.5 v v g = 3.0 v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d =12a v g =10v 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 16 20 24 28 32 36 24681 0 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =12a t c =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 AP40U03GH 0 1 10 100 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/tpeak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 4 8 12 16 0 4 8 12 16 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =12a v ds =15v v ds =18v v ds =24v 10 100 1000 1 5 9 1 31 72 12 52 9 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90%
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 333?? f 2.20 2.63 3.05 f1 0.5 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters.2.dimension does not include mold protrusions. part marking information & packing : to-252 symbols advanced power electronics corp. e e dd1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part package code 40u03gh ywwsss date code (ywwsss) y ? last digit of the year ww ? week ss s ? sequence logo ??3??3?? ?
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